1/8 march, 7 2003 PD57030 PD57030s rf power transistors the ldmost plastic family n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 30 w with 14 db gain @ 945 mhz / 28v ? new rf plastic package description the PD57030 is a common source n-channel, en- hancement-mode lateral field-effect rf power transistor. it is designed for high gain, broad band commercial and industrial applications. it operates at 28 v in common source mode at frequencies up to 1 ghz. PD57030 boasts the excellent gain, linearity and reliability of sts latest ldmos technology mount- ed in the first true smd plastic rf power package, powerso-10rf. PD57030s superior linearity per- formance makes it an ideal solution for base sta- tion applications. the powerso-10 plastic package, designed to of- fer high reliability, is the first st jedec approved, high power smd package. it has been specially optimized for rf needs and offers excellent rf performances and ease of assembly. powerso-10rf (formed lead) order code PD57030 branding PD57030 powerso-10rf (straight lead) order code PD57030s branding PD57030s absolute maximum ratings (t case = 25 c) symbol parameter value unit v (br)dss drain-source voltage 65 v v gs gate-source voltage 20 v i d drain current 4 a p diss power dissipation (@ tc = 70 c) 52.8 w t j max. operating junction temperature 165 c t stg storage temperature -65 to +150 c thermal data r th(j-c) junction -case thermal resistance 1.8 c/w mounting recommendations are available in www.st.com/rf/ (look for application note an1294)
PD57030 - PD57030s 2/8 electrical specification (t case = 25 c) static dynamic impedance data symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i ds = 10ma 65 v i dss v gs = 0 v v ds = 28 v 1 m a i gss v gs = 20 v v ds = 0 v 1 m a v gs(q) v ds = 28 v i d = 50 ma 2.0 5.0 v v ds(on) v gs = 10 v i d = 3 a 1.3 v g fs v ds = 10 v i d = 3a 1.8 mho c iss v gs = 0 v v ds = 28 v f = 1 mhz 57 pf c oss v gs = 0 v v ds = 28 v f = 1 mhz 30 pf c rss v gs = 0 v v ds = 28v f = 1 mhz 2.3 pf symbol test conditions min. typ. max. unit p out v ds = 28v i dq = 50 ma f = 945 mhz 30 w g p v ds = 28v i dq = 50 ma p out = 30 w f = 945 mhz 13 14 db h d v ds = 28v i dq = 50 ma p out = 30 w f = 945 mhz 45 53 % load mismatch v ds = 28v i dq = 50 ma p out = 30 w f = 945 mhz all phase angles 10:1 vswr pin connection gate source drain sc15200 typical input impedance typical drain load impedance g d s z dl zin sc13140 PD57030s freq. mhz z in ( w )z dl ( w ) 925 0.929 - j 0.315 2.60 + j 1.45 945 0.809 - j 0.085 2.46 + j 0.492 960 0.763 - j 0.428 2.35 + j 0.591
3/8 PD57030 - PD57030s typical performance capacitances vs.drain voltage drain current vs gate-source voltage gate-source voltage vs case temperature -50 0 50 100 150 tc (oc) 0.9 0.95 1 1.05 vgs (normalized) vds = 10v id = 250ma id = 500ma id = 1a id = 1.5a id = 2a id = 2.5a id = 3a 0 5 10 15 20 25 30 vdd (v) 1 10 100 c (pf) crss coss ciss 234567 vgs (v) 0 1 2 3 4 5 id (a)
PD57030 - PD57030s 4/8 efficiency vs. output power output power vs bias current efficiency vs bias current output power vs input power input return loss vs output power power gain vs output power typical performance (PD57030s) 0 0.5 1 1.5 2 pin (w) 0 10 20 30 40 50 pout (w) vdd = 28v idq = 50ma 960 mhz 925 mhz 945 mhz 0 1020304050 pout (w) -30 -25 -20 -15 -10 -5 0 5 irl (db) vdd = 28v idq = 50ma 925 mhz 945 mhz 960 mhz 0 1020304050 pout (w) 4 6 8 10 12 14 16 18 pg (db) vdd = 28v idq = 50ma 960 mhz 925 mhz 945 mhz 0 1020304050 pout (w) 20 30 40 50 60 70 eff (%) vdd = 28v idq = 50ma 960 mhz 945 mhz 925 mhz 0 100 200 300 400 500 idq (ma) 10 15 20 25 30 35 pout (w) pin = 29.1dbm vdd = 28v 960 mhz 925 mhz 945 mhz 0 100 200 300 400 500 idq (ma) 10 20 30 40 50 60 eff (%) pin = 29.1dbm vdd = 28v 960 mhz 925 mhz 945 mhz
5/8 PD57030 - PD57030s output power vs drain voltage efficiency vs drain voltage output power vs gate-source voltage typical performance (PD57030s) 10 15 20 25 30 vdd (v) 5 10 15 20 25 30 35 pout (w) pin = 29.1dbm idq = 50ma 960 mhz 925 mhz 945 mhz 10 15 20 25 30 vdd (v) 10 20 30 40 50 60 eff (%) pin = 29.1dbm idq = 50ma 925 mhz 945 mhz 960 mhz 012345 vgs (v) 0 10 20 30 40 pout (w) pin = 29.1dbm vdd = 28v 960 mhz 925 mhz 945 mhz
PD57030 - PD57030s 6/8 test circuit schematic test circuit component part list component description c1, c8, c9, c13 47pf atc 100b surface mount ceramic chip capacitor c2, c7 0.8-8.0pf giga trim variable capacitor c3, c4, c5, c6 7.5pf atc 100b surface mount ceramic chip capacitor c10 1000pf atc 100b surface mount ceramic chip capacitor c11, c15 0.1 m f / 500v surface mount ceramic chip capacitor c12 10 m f / 50v aluminum electrolytic radial lead capacitor c14 100pf atc 100b surface mount ceramic chip capacitor c16 220 m f / 63v aluminum electrolytic radial lead capacitor r1 18k w , 1w surface mount chip resistor r2 4.7m w , 1w surface mount chip resistor r3 120 w , 2w surface mount chip resistor fb1, fb2 shield bead surface mount emi l1, l2 inductor, 5turns air wound #22awg, id=0.059[1.49], nylon coated magnet wire + g v rf in v d rf out + + d g +
7/8 PD57030 - PD57030s test circuit test circuit photomaster PD57030s 6.4 inches 4 inches
PD57030 - PD57030s 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this p ublication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicr oelectronics. the st logo is registered trademark of stmicroelectronics a 2003 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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